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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6249 2N6250 2N6251 DESCRIPTION With TO-3 package High voltage,high speed Low collector saturation voltage APPLICATIONS High voltage inverters Switching regulators Line operated amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6249 VCBO Collector-base voltage VCEO Collector-emitter voltage INCH ANG 2N6250 2N6251 SEM Open emitter CON I CONDITIONS TOR DUC VALUE 300 375 450 200 275 350 UNIT V 2N6249 2N6250 Open base V 2N6251 VEBO IC ICM IB PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae Open collector 6 10 30 10 175 200 -65~200 ae ae V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6249 VCEO(SUS) Collector-emitter sustaining voltage 2N6250 2N6251 2N6249 VCE(sat) Collector-emitter saturation voltage 2N6250 2N6251 2N6249 VBE(sat) Base-emitter saturation voltage 2N6250 2N6251 IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=10A;IB=1.0A IC=10A;IB=1.25 A IC=10A;IB=1.67 A IC=200mA ; IB=0 SYMBOL 2N6249 2N6250 2N6251 CONDITIONS MIN 200 275 350 TYP. MAX UNIT V 1.5 V 2.25 V ICEV ICEO IEBO Collector cut-off current VCE=RatedVCEV;VBE=-1.5V TC=125ae VCE=150V;IB=0 VCE=225V;IB=0 VCE=300V;IB=0 VEB=6V; IC=0 2N6249 2N6250 Collector cut-off current Emitter cut-off current CHA IN NG S 2N6251 2N6249 2N6250 2N6251 CON EMI TOR DUC 5.0 1.0 10 50 50 50 5.0 10 mA mA mA hFE DC current gain IC=10A ; VCE=3V 8 6 fT Is/b Transition frequency Second breakdown collector current With base forward biased IC=1A ; VCE=10V VCE=30V,t=1.0s, Nonrepetitive f=1MHz 2.5 5.8 MHz A Switching times tr ts tf Rise time Storage time Fall time For 2N6249 IC=10A; IB1=-IB2=1.0A;VCC=200V For 2N6250 IC=10A;IB1=-IB2=1.25A;VCC=200V For 2N6251 IC=10A;IB1=-IB2=1.67A;VCC=200V 2.0 3.5 1.0 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6249 2N6250 2N6251 NG S HA INC CON EMI TOR DUC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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